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| VISHAY BYT51. Vishay Semiconductors Standard Avalanche Sinterglass Diode \ Features * Glass passivated junction * Hermetically sealed package * Low reverse current Applications Rectification diode Mechanical Data Case: Sintered glass case, SOD 57 Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 370 mg, (max. 500 mg) 949539 Parts Table Part BYT51A BYT51B BYT51D BYT51G BYT51J BYT51K BYT51M Type differentiation VR = 50 V; IFAV = 1.5 A VR = 100 V; IFAV = 1.5 A VR = 200 V; IFAV = 1.5 A VR = 400 V; IFAV = 1.5 A VR = 600 V; IFAV = 1.5 A VR = 800 V; IFAV = 1.5 A VR = 1000 V; IFAV = 1.5 A SOD57 SOD57 SOD57 SOD57 SOD57 SOD57 SOD57 Package Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Reverse voltage = Repetitive peak reverse voltage Test condition see electrical characteristics see electrical characteristics see electrical characteristics see electrical characteristics see electrical characteristics see electrical characteristics see electrical characteristics Peak forward surge current tp = 10 ms, half sinewave Sub type BYT51A BYT51B BYT51D BYT51G BYT51J BYT51K BYT51M Symbol VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = VRRM IFSM Value 50 100 200 400 600 800 1000 50 Unit V V V V V V V A Document Number 86028 Rev. 6, 07-Jan-02 www.vishay.com 1 BYT51. Vishay Semiconductors Parameter Repetitive peak forward current Average forward current Junction and storage temperature range Non repetitive reverse avalanche energy I(BR)R = 1 A on PC board l = 10 mm Test condition Sub type Symbol IFRM IFAV IFAV VISHAY Value 9 1 1.5 Unit A A A C mJ Tj = Tstg - 55 to + 175 ER 20 Maximum Thermal Resistance Tamb = 25 C, unless otherwise specified Parameter Junction ambient Test condition l = 10 mm, TL = constant on PC board with spacing 25 mm Sub type Symbol RthJA RthJA Value 45 100 Unit K/W K/W Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Forward voltage Reverse current Reverse recovery time IF = 1 A IF = 1 A, Tj = 175 C VR = VRRM VR = VRRM, Tj = 150 C IF = 0.5 A, IR = 1 A, iR = 0.25 A Test condition Sub type Symbol VF VF IR IR trr Min Typ. 0.95 Max 1.1 1.0 1 100 4 Unit V V A A s Typical Characteristics (Tamb = 25 C unless otherwise specified) R thJA - Therm. Resist. Junction / Ambient ( K/W ) 120 l 100 80 60 40 20 0 0 5 10 15 20 25 30 16323 l 10.000 I F - Forward Current ( A) 1.000 Tj=175C TL=constant 0.100 Tj=25C 0.010 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF - Forward Voltage ( V ) 94 9101 l - Lead Length ( mm ) Figure 1. Typ. Thermal Resistance vs. Lead Length Figure 2. Forward Current vs. Forward Voltage www.vishay.com 2 Document Number 86028 Rev. 6, 07-Jan-02 VISHAY BYT51. Vishay Semiconductors 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 RthJA=100K/W PCB: d=25mm RthJA=45K/W l=10mm PR - Reverse Power Dissipation ( mW ) 1.6 Forward Current ( A ) 350 VR = VRRM 300 250 200 150 100 50 0 PR-Limit @80%VR PR-Limit @100%VR I - FAV Average 16324 60 80 100 120 140 160 180 Tamb - Ambient Temperature ( C ) 40 25 16326 50 75 100 125 150 Tj - Junction Temperature ( C ) 175 Figure 3. Max. Average Forward Current vs. Ambient Temperature Figure 5. Max. Reverse Power Dissipation vs. Junction Temperature 1000 VR = VRRM CD - Diode Capacitance ( pF ) IR - Reverse Current ( mA ) 45 40 35 30 25 20 15 10 5 f=1MHz 100 10 1 25 16325 0 50 75 100 125 150 175 16327 0.1 1.0 10.0 100.0 Tj - Junction Temperature ( C ) VR - Reverse Voltage ( V ) Figure 4. Reverse Current vs. Junction Temperature Figure 6. Diode Capacitance vs. Reverse Voltage Package Dimensions in mm 3.6 max. Sintered Glass Case SOD 57 Weight max. 0.5g Cathode Identification technical drawings according to DIN specifications 94 9538 0.82 max. 26 min. 4.2 max. 26 min. Document Number 86028 Rev. 6, 07-Jan-02 www.vishay.com 3 BYT51. Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. VISHAY 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 4 Document Number 86028 Rev. 6, 07-Jan-02 |
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